PART |
Description |
Maker |
K7Q161862 K7Q161862B K7Q163662B |
512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
IS61QDPB451236A |
512Kx36 and 1Mx18 configuration available
|
Integrated Silicon Solu...
|
K7D163674B-HC30 K7D163674B-HC27 K7D163674B-HC33 K7 |
512Kx36 & 1Mx18 SRAM
|
Samsung semiconductor http://
|
KM736V989 KM718V089 |
512Kx36 & 1Mx18 Synchronous SRAM
|
Samsung Electronic Samsung semiconductor
|
K7A161830B K7A163630B |
512Kx36 & 1Mx18 Synchronous SRAM
|
SAMSUNG ELECTRONICS
|
K7N163645M K7N161845M |
512Kx36 & 1Mx18-Bit Pipelined NtRAMTM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K7K1636U2C K7K1618U2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
K7Q161852A |
(K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM
|
Samsung semiconductor
|
K7M161825M |
(K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM-TM
|
Samsung semiconductor
|
K7J161882B |
(K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM
|
Samsung semiconductor
|